National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

An Institute of National Importance

All Publications

Prasanna Kumar Sahu

Professor
pksahu@nitrkl.ac.in

S. K. Mohapatra, K. P. Pradhan, L. Artola, and P. K. Sahu,"Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET", Materials Science in Semiconductor Processing, vol.31, pp.455-462, Elsevier, March 2015, 10.1016/j.mssp.2014.12.026       Article
N. P. Nath, S. R. Parija, P. K. Sahu, and I. S. S,"Brief comparison of sequential paging and concurrent paging in cellular technology", in 2015 International Conference on Industrial Instrumentation and Control (ICIC), pp.1078-1082, IEEE, Pune, India 2015, 10.1109/IIC.2015.7150907       Inproceedings
A. Biswas, P. K. Sahu, and M. Chandra,"Audio visual isolated Hindi digits recognition using HMM", International Journal of Computational Vision and Robotics, vol.5, no.3, pp.320-334, Inderscience, December 2015, 10.1504/IJCVR.2015.071336       Article
S. K. Mohapatra, K. P. Pradhan, and P. K. Sahu,"Temperature dependence inflection point in ultra-thin Si directly on insulator (SDOI) MOSFETs: an influence to key performance metrics", Superlattices and Microstructures, vol.78, pp.134-143, Elsevier, February 2015, 10.1016/j.spmi.2014.11.037       Article
S., P. K. Sahu, and S. K. Behera,"Design and optimisation of a zeroth order resonant antenna along with experimental verification for wireless applications", International Journal of Signal and Imaging Systems Engineering, vol.8, no.1, pp.105-114, Inderscience, December 2015, 10.1504/IJSISE.2015.067051       Article
B. Jena, K. P. Pradhan, S. Dash, G., P. K. Sahu, and S.,"Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime", Advances in Natural Sciences: Nanoscience and Nanotechnology, vol.6, no.3, pp.1-4, IOPScience, June 2015, 10.1088/2043-6262/6/3/035010       Article
K. P. Pradhan, M., S., and P. K. Sahu,"Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA) MOSFET using center potential", Ain Shams Engineering Journal, vol.6, no.4, pp.1171-1177, Elsevier, December 2015, 10.1016/j.asej.2015.04.009       Article
K. P. Pradhan, S., and P. K. Sahu,"Design equivalent scaling on double gate FinFET towards analog and RF figures of merits: A technology computer aided design estimation", Journal of Low Power Electronics, vol.11, no.3, pp.316-322, American Scientific Publishers, September 2015, 10.1166/jolpe.2015.1396       Article
K. P. Pradhan, P. K. Sahu, D. Singh, L. Artola, and S.,"Reliability analysis of charge plasma based double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET", Superlattices and Microstructures, vol.85, pp.149-155, Elsevier, September 2015, 10.1016/j.spmi.2015.05.034       Article
S., K. P. Pradhan, D. Singh, and P. K. Sahu,"The role of geometry parameters and fin aspect ratio of sub-20nm SOI-FinFET: An analysis towards analog and RF circuit design", IEEE Transactions on Nanotechnology, vol.14, no.3, pp.546-554, IEEE, May 2015, 10.1109/TNANO.2015.2415555       Article