National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

An Institute of National Importance

Syllabus

Course Details

Subject {L-T-P / C} : EC6408 : RF and Microwave Integrated Circuits { 3-0-0 / 3}

Subject Nature : Theory

Coordinator : Prasun Chongder

Syllabus

Module 1 :

Module-I (Hrs: 08)
Concept of Planar transmission line, equivalent electrical circuit model in distributed domain. Scattering parameters (S-parameters) and Transmission parameters (T-parameters) analysis using two-port networks, Properties of the S-parameters. Generalized S-parameters for N-port Networks. S-parameters and T-parameters to other network parameters conversion. Graphical representation of S-parameters using signal flow graph and its application. Transmission line based two-port and three port network analysis using S-parameters.
Module-II (Hrs: 09)
Smith-chart, Graphical representation of lumped impedance, admittance, lossless and lossy transmission line in Smith Chart. theoretically and graphically Impedance matching (narrow and broad band) network design using lumped elements and distributed elements (transmission line). Design of single and double-stub matching network (mathematically and graphically).
Module-III (Hrs: 09)
Power gain expressions of two-port network using signal flow graph and mathematical derivation. Stability analysis and corresponding stability circle of two-port networks. Various constant gain circles for two-port networks (unilateral and bilateral). Simultaneous conjugate match for unconditional stable networks. Contant VSWR circle. Practical RF small signal amplifier design with specific power gain, input and output return loss more than 10 dB. In RF amplifier, different type of DC bias network design techniques.
Module-IV (Hrs: 04)
Noise in two-port networks. Constant noise figure circles. Small signal low noise RF amplifier design using constant noise figure circles and various power gain circles.
Module-V (Hrs: 08)
Linear and nonlinear device modeling techniques for RF & Microwave FET (MESFET, HEMT, pHEMT) using parameter extraction method. Microwave oscillator design using one port (negative resistance method) and two-port (feedback method) topology. Low-phase noise oscillator design techniques. Using RF CAD tools, design of linear and nonlinear amplifiers and oscillators.

Course Objective

1 .

Familiarization with high frequency (RF & Microwave) narrow band and broadband circuits.

2 .

Learning theoretical and practical foundations of understanding and designing microwave circuits.

3 .

Learning the necessary software tools to build practical microwave circuits.

4 .

Learning and understanding the topics including transmission line theory, impedance matching, S-parameters, Smith chart, network analysis, noise analysis, device modeling, amplifier design, oscillator design.

Course Outcome

1 .

After completion of this course students will be able to:
CO1: To understand the differences between high frequency (microwave) circuits and low frequency circuits.
CO2: To apply the concepts of wave propagation and generation, transmission lines, and impedance to microwave circuits.
CO3: To construct practically narrowband and broadband RF matching networks using lumped and distributed elements.
CO4: To evaluate loss, gain and power propagation in single/multiport network using S-parameters
CO5: To design and layout passive microwave circuits and simple one stage small signal amplifier circuits.

Essential Reading

1 .

D M Pozar, Microwave Engineering, John Wiley & Sons , 2004

2 .

Gonzalez, Guillermo, Microwave transistor amplifiers: analysis and design, Prentice hall , 1997

Supplementary Reading

1 .

Stephen A. Maas, Nonlinear Microwave and RF Circuits, Artech House , 2 edition (January 31, 2003)

2 .

Andrei Grebennikov, RF and Microwave Transistor Oscillator Design, Wiley , 1 edition (May 21, 2007)