National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

An Institute of National Importance

Syllabus

Course Details

Subject {L-T-P / C} : EC6273 : VLSI Devices and Process Simulation Laboratory { 0-0-3 / 2}

Subject Nature : Practical

Coordinator : Santanu Sarkar

Syllabus

Module 1 :

1] Simulate a pn junction diode using ATLAS and plot the following
1. Potential and electric field profile across the junction
2. I-V Characteristics.
3. Doping Charge Density.
4. Band diagram.
5. Hole and Electron Current Density.
2] Fabricate a NPN Transistor using ATEHENA, and plot the following characteristics:
1. Electron and hole charge density across the device.
2. Input and Output Characteristics.
3. Estimation and Verification of Depletion Widths of Device.
4. Band diagram Analysis.
3] Fabricate a MOS Capacitor using ATHENA, and plot the following characteristics after ATLAS simulation:
1. Band diagram Analysis under Different Bias Condition.
2. C-V Plot under Different Bias Condition.
4] Plot the following characteristics for a n MOSFET:
1. Potential Profile.
2. Band diagram Analysis.
3. Estimation and Verification of Depletion Width of Device.
4. Analysis of Sub-threshold swings of Device.
5. Analysis of Leakage Current Density of Device.
6. Analysis of Inversion Charge Density of Device.
7. Analysis of gm – Vg Plot of Device.
5] Extract the threshold voltage of a n MOSFET using following methods
(1) Constant current method
(2) Maximum transconductance method
(3) Interpolation method

6] Simulate a Fin-FET with given device dimensions, and plot the following characteristics:
1. Potential Profile.
2. Band diagram Analysis.
3. Estimation and Verification of Depletion Width of Device.
4. Analysis of Sub-threshold swings of Device.
5. Analysis of Leakage Current Density of Device.
6. Analysis of Inversion Charge Density of Device.
7. Analysis of I – V characteristics of Device.
8. Comparison of I – V characteristics of Device with MOSFET.
7] Simulate and analyse the RF Performance of a short channel MOSFET.
8] Plot the transfer characteristics of a CMOS inverter
9] Using mix mode simulation, simulate a common source amplifier. And also plot its frequency response
10] A mini project

Course Objective

1 .

Objective is to teach students about the semiconductor device Physics.

2 .

Students will learn about different semiconductor device modelling with the help of simulation tools.

3 .

The lab is intended to teach students about device structure and they will gain confidence by design the device structure and plotting necessary characteristic in relevant device modelling tools.

4 .

At the end students will complete an individual mini-project which will help them to understand the subject better as well as it will help them to boost their confidence.

Course Outcome

1 .

1. Students will demonstrate skill in interpreting simulation data
2. will be able to explain the functioning of various classical solid-state devices, including several types of diodes ,bi-polar junction transistors, and field-effect transistors
3. will be able to understand the function of some non-classical devices like FinFETs
4. will able to design circuits using classical and non-classical devices
5. students will get the understating of fabrication steps for classical and non-classical devices

Essential Reading

1 .

Silvaco Manual, ATLAS and ATHENA user manual from SILVACO, Silvaco , Available as Silvaco manual

2 .

S. M. Sze, Physics of Semiconductor Devices, John Wiley and Sons , 2nd edition

Journal and Conferences

1 .

IEEE Journal of the Electron Devices

2 .

IEEE Transactions on Electron Devices