Module 1: Part I: Introduction to Semiconductor Device Modeling (3 hours)
Introduction to modeling, definition & importance of modeling, modeling jargon, constituents of a device model, importance of approximations, steps for deriving a model, model types, compact modeling approaches, criteria for industry standard models, and familiarization with existing industry standard models.
Part II: Introduction to Circuit Simulators (3 hours)
SPICE simulation basics, simulators, coding syntax, and practices.
Module 2: Fundamentals of Semiconductor Device Physics (6 hours)
Semiconductor fundamentals, pn junction, metal-semiconductor contacts, heterostructures.
Module 3: Part I: MOS Capacitor (4 hours)
MOS capacitor at equilibrium, MOS capacitor under applied bias, formulation of Poisson’s equation in terms of band-bending potential, electrostatic potential, and charge distribution, the capacitance of MOS structure, polysilicon-gate depletion effect on C-V characteristics.
Part II: Compact Modeling of Large Geometry MOSFET (6 hours)
MOSFET structure, fabrication, qualitative description of MOSFET working, MOSFET threshold voltage model, MOSFET drain current model, parameter extraction, binning.
Part III: Compact Modeling of Small Geometry MOSFET (3 hours)
Threshold voltage model, drain current model, subthreshold current model.
Part IV: MOSFET Capacitance Model (5 hours)
Basic MOSFET capacitance model, charge-based capacitance model, gate overlap capacitance model, limitation of quasi-static model, S/D pn junction capacitance model.
Module 4: Multi-gate Device Modeling (5 hours)
Basics of multi-gate FETs, fundamentals of FinFETs, common multiple-gate FinFET modeling.
Module 5: Beyond-CMOS Transistor Modeling (5 hours)
TFET basics, TFET design consideration, compact TFET models.

To understand different MOSFET models used for circuit CAD and to know different circuit simulators used to design VLSI systems.

To understand the modeling of large geometry and small-geometry MOSFETs.

To understand the impact of different second-order effects on the model equations.

To understand the modeling challenges of the beyond-CMOS transistors.

After completion of this course, students should be able to
CO1: Apply semiconductor physics and equations to analyze semiconductor devices like diodes and transistors and derive equations for their terminal characteristics.
CO2: Identify different compact models used in circuit CAD.
CO3: Derive model equations for large-geometry and small-geometry MOSFETs.
CO4: Analyze various second-order effects on device modeling and characterization.
CO5: Comprehend multi-gate FETs and beyond-CMOS transistors.

R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, John Wiely & Sons.

Y. Tsividis, Operation and Modeling of The MOS Transistor, McGraw Hill, 1999

W. Liu, MOSFET Models for SPICE Simulation, Including BSIM3v3 and BSIM4, John Wiley & Sons

Y. S. Chauhan, FinFET Modeling for IC Simulation and Design Using the BSIM CMG Standard, Academic Press

IEEE Transactions on Electron Devices