National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

An Institute of National Importance

Syllabus

Course Details

Subject {L-T-P / C} : EC6273 : VLSI Devices and Process Simulation Laboratory { 0-0-3 / 2}

Subject Nature : Practical

Coordinator : Prof. Santanu Sarkar

Syllabus

1] Simulate a pn junction diode using ATLAS and plot the following
1. Potential and electric field profile across the junction
2. I-V Characteristics.
3. Doping Charge Density.
4. Band diagram.
5. Hole and Electron Current Density.
2] Fabricate a NPN Transistor using ATEHENA, and plot the following characteristics:
1. Electron and hole charge density across the device.
2. Input and Output Characteristics.
3. Estimation and Verification of Depletion Widths of Device.
4. Band diagram Analysis.
3] Fabricate a MOS Capacitor using ATHENA, and plot the following characteristics after ATLAS simulation:
1. Band diagram Analysis under Different Bias Condition.
2. C-V Plot under Different Bias Condition.
4] Plot the following characteristics for a n MOSFET:
1. Potential Profile.
2. Band diagram Analysis.
3. Estimation and Verification of Depletion Width of Device.
4. Analysis of Sub-threshold swings of Device.
5. Analysis of Leakage Current Density of Device.
6. Analysis of Inversion Charge Density of Device.
7. Analysis of gm – Vg Plot of Device.
5] Extract the threshold voltage of a n MOSFET using following methods
(1) Constant current method
(2) Maximum transconductance method
(3) Interpolation method

6] Simulate a Fin-FET with given device dimensions, and plot the following characteristics:
1. Potential Profile.
2. Band diagram Analysis.
3. Estimation and Verification of Depletion Width of Device.
4. Analysis of Sub-threshold swings of Device.
5. Analysis of Leakage Current Density of Device.
6. Analysis of Inversion Charge Density of Device.
7. Analysis of I – V characteristics of Device.
8. Comparison of I – V characteristics of Device with MOSFET.
7] Simulate and analyse the RF Performance of a short channel MOSFET.
8] Plot the transfer characteristics of a CMOS inverter
9] Using mix mode simulation, simulate a common source amplifier. And also plot its frequency response
10] A mini project

Course Objectives

  • Objective is to teach students about the semiconductor device Physics.
  • Students will learn about different semiconductor device modelling with the help of simulation tools.
  • The lab is intended to teach students about device structure and they will gain confidence by design the device structure and plotting necessary characteristic in relevant device modelling tools.
  • At the end students will complete an individual mini-project which will help them to understand the subject better as well as it will help them to boost their confidence.

Course Outcomes

1. Students will demonstrate skill in interpreting simulation data <br />2. will be able to explain the functioning of various classical solid-state devices, including several types of diodes ,bi-polar junction transistors, and field-effect transistors <br />3. will be able to understand the function of some non-classical devices like FinFETs <br />4. will able to design circuits using classical and non-classical devices <br />5. students will get the understating of fabrication steps for classical and non-classical devices

Essential Reading

  • Silvaco Manual, ATLAS and ATHENA user manual from SILVACO, Silvaco , Available as Silvaco manual
  • S. M. Sze, Physics of Semiconductor Devices, John Wiley and Sons , 2nd edition

Supplementary Reading

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Journal and Conferences

  • IEEE Journal of the Electron Devices
  • IEEE Transactions on Electron Devices