Course Details
Subject {L-T-P / C} : EC6213 : Micro-Electronic Devices and Applications { 3-0-0 / 3}
Subject Nature : Theory
Coordinator : Dr. Arjun Singh Yadav
Syllabus
Module-1: Definition of Technology node, Basic CMOS Process flow, MOS Scaling theory, Issues in scaling MOS transistors: Short channel effects, Description of a typical 65 nm CMOS technology, Requirements for Non classical MOS transistor, MOS capacitor, Role of interface quality and related process techniques, Gate oxide thickness scaling trend, SiO2 vs High-k gate dielectrics, Integration issues of high-k, Interface states, bulk charge.
Module-2: Metal gate transistor: Motivation, Transport in Nano MOSFET, velocity saturation, ballistic transport, injection velocity, velocity overshoot.
Module-3: SOI - PDSOI and FDSOI. Ultrathin body SOI - double gate transistors, integration issues, Vertical transistors - FinFET and Surround gate FET.
Module-4: Metal source/drain junctions - Properties of schotky junctions on Silicon, Germanium and compound semiconductors.
Module-5: Synthesis of Nanomaterials: CVD, Nucleation and Growth, ALD, Epitaxy, MBE, Compound semiconductor hetero-structure growth and characterization: Quantum wells.
Course Objectives
- To make students aware of microelectronic circuits and their fabrication processes along with the latest technology and their modern applications.
- To understand evolution of FET with technology Scaling.
Course Outcomes
CO1: Explore the issues with short channel devices. <br />CO2: Learn about the evolution of FET gate over channel. <br />CO3: Understand the SOI FET technology. <br />CO4: Understand the problem in metal semiconductor contact formation. <br />CO5: Able to define the various process steps for Nano device fabrication.
Essential Reading
- Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press
- Plummer, Deal , Griffin, Silicon VLSI Technology, Pearson Education
Supplementary Reading
- Brundle, C.Richard Evans, Charles A. Jr. Wilson, Shaun, Encyclopedia of Materials Characterization, Elsevier.
- S. M. Szee, Semiconductor Devices: Physics and technology, WILEy
Journal and Conferences
- IEEE Transaction of Solid State Circuits