National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

An Institute of National Importance

Syllabus

Course Details

Subject {L-T-P / C} : EC6211 : VLSI Fabrication Technology { 3-0-0 / 3}

Subject Nature : Theory

Coordinator : Prof. Sougata Kumar Kar

Syllabus

Introduction to IC Technology: Basic fabrication steps and their Importance. Environment of IC Technology: Concepts of Clean room and safety requirements, Concepts of Wafer cleaning processes and wet chemical etching techniques. Impurity Incorporation: Solid State diffusion modeling and technology Ion Implantation modeling, technology and damage annealing, characterization of Impurity profiles, Oxidation: Kinetics of Silicon dioxide growth both for thick, thin and ultra thin films, Oxidation technologies in VLSI and ULSI, Characterization of oxide films, High k and low k dielectrics for ULSI. Lithography: Photolithography, E-beam lithography and newer lithography techniques for VLSI/ULSI, Mask generation. Chemical Vapour Deposition Techniques: CVD techniques for deposition of polysilicon, silicon dioxide, silicon nitride and metal films Epitaxial growth of silicon: modeling and technology. Metal Film Deposition: Evaporation and sputtering techniques, Failure mechanisms in metal interconnects Multi-level metallization schemes. Plasma and Rapid Thermal Processing: PECVD, Plasma etching and RIE techniques RTP techniques for annealing, growth and deposition of various films for use in ULSI. BJT fabrication steps, MOSFETs fabrication: metal gate and poly gate technology, Isolation techniques, tailoring in device parameters, CMOS process, BICMOS process.

Course Objectives

  • Explain the process flow for different microelectronic processes.
  • Describe the processing steps (including the chemical and physical basis,) manufacturing techniques, measurement techniques, and important output parameters.
  • Relate device characteristics to key process parameters.

Course Outcomes

Development of VLSI Fabrication methodology for CMOS devices. Students can also develop fabrication steps for novel semiconductor devices like SOI MOSFETs, DG MOSFETs, FinFETs etc.

Essential Reading

  • S. M. Sze, VLSI Technology, McGraw Hill Education , 2nd Edition, 2017
  • S.K.Gandhi, VLSI Fabrication Principles, Wiley , 2nd Edition, 2008

Supplementary Reading

  • S. Franssila, Introduction to Microfabrication, Wiley-Blackwell , 2nd Edition, 2010
  • Stephen A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press , 2nd Edition, 2012

Journal and Conferences

  • EEE Transactions on Semiconductor Manufacturing
  • IEEE Transactions on Electron Devices