Course Details
Subject {L-T-P / C} : EC6207 : Modeling and Circuit Simulators for VLSI Systems { 3-0-0 / 3}
Subject Nature : Theory
Coordinator : Prof. Ayas Kanta Swain
Syllabus
Introduction to VLSI modeling and simulation, Semiconductor Fundamentals, Metal Semiconductor Contacts. Schottky barriers, rectifying and ohmic contacts, I-V characteristics. PN junctions MOS Structure, MOS capacitors and MOSFETs: MOS capacitor – fabrication, surface charge – accumulation, depletion, inversion, threshold voltage, C-V characteristics – low and high frequency, MOSFET – fabrication, operation, gradual channel approximation, simple charge control model (SCCM), Pao-Sah and Shichmann-Hodges models, I-V characteristics, high-frequency model, second-order effects – velocity saturation, short-channel effects, charge sharing model, hot cattier effects, gate tunneling, sub-threshold operation – drain induced barrier lowering (DIBL) effect, unified charge control model (UCCM), SPICE level 1, 2 and 3, and Berkeley short-channel IGFET model (BSIM) D.C. Analysis (Linear and Non-linear), Transient Analysis (Linear and Non-linear), Small Signal – (Freq – Domain) Analysis, Sensitivity, Noise, Logic Simulation Nano-CMOS Circuit Modeling Introduction to VLSI Design and Simulation CAD Tools
Course Objectives
- To study the modelling of MOSFETs
- To learn BSIM modelling
Course Outcomes
CO1:To create the fundamental knowhow on the device modeling and background knowledge on circuit simulators like BSIM, HSIM etc.. <br />CO2:To develop compact models for both long and short channel length MOSFETs and sub-threshold models for short channel length MOSFETs. <br />CO3: To understand the various second order effects on device modelling and characterization <br />CO4: TO model the device and perform various analysis such as DC, small signal and transient analysis of the modeled device.
Essential Reading
- R.S.Muller and T.I.Kamins, Device Electronics for Integrated Circuits, John Wiely & Sons.
- D.Foty, , MOSFET Modeling with SPICE by PH., PHI
Supplementary Reading
- Y.Tsividis, Operation and Modeling of The MOS Transistor, McGraw Hill, 1999
- B.G. Streetman, “Solid State Electronics Devices”, PH