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Current research
Silicon quantum dot solar cell using top-down approach, PareshGovind Kale1 Chetan singh Solanki.2 1Dept. of Electrical Engg, NIT Rourkela, 2Dept. of Energy Science and Engg, IIT Bombay

S
ilicon quantum dots (QDs) have attracted a broad interestin a wide field of applications such as Si photonics, nonvolatile memory devices, logic nano-devices and also for the third-generation photovoltaic devices. Quantum confinement effect, a feature of QDs, is exhibition of discrete energy level by a nanoparticle smaller
than exciton Bohr radius. The current trend of research in the area of third-generation photovoltaics is to increase the efficiency of solar cell device adopting alternate and novel ways such as use of quantum dots to absorb maximum solar spectrum. A new and low-cost top-down approach to fabricate silicon quantum dot solar cell (QDSC) using spin coating of SiQDs embedded in flowable oxide is proposed. Si QDs with diameter smaller than 8 nm were synthesized using top down approach by ultrasonication of free standing porous silicon films obtained by anodization of Si. The novelty and simplicity of the QDSC fabrication process make these results important. (List of Research)

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