Course Details
Subject {L-T-P / C} : EE3213 : Semiconductor Fabrication Technology { 2-0-0 / 2}
Subject Nature : Theory
Coordinator : Prof. Paresh G Kale
Syllabus
Unit/Module 1 Crystal Growth (3hr)
Si Crystal growth from melt, FZ and Cz process, GaAs crystal growth technique
Unit 2 Silicon Oxidation (3hr)
Thermal oxidation, impurity redistribution, oxide quality and thickness
Unit 3 Photolithography (2hr)
Optical lithography, advanced lithography methods
Unit 4 Etching (2hr)
Wet chemical etching, dry etching
unit 5 Diffusion (3hr)
basic diffusion process and equation, extrinsic diffusion, lateral diffusion
unit 6 Ion implantation (2hr)
Range of implanted ions, implant damage and annealing
unit 7 Film deposition (10hr)
Epitaxial growth techniques (CVD, Molecular beam) and defects, Dielectric deposition (SiO2, SiN), Polysilicon deposition, metallization
Course Objectives
- • Familiarization with the trends and challenges of semiconductor device fabrication
- • Introduction to basic Semiconductor fabrication process
Course Outcomes
CO1: To know the fundamentals of various IC fabrication processes
CO2: To know the process flow for fabrication of semiconductor devices
CO3: Estimation of process parameters (Growth, yield, rate)
CO4: To understand the instrumentation and components of the fabrication unit
CO5: Familiarisation with the upcoming semiconductor technology
Essential Reading
- • J.D. Plummer, M.D. Deal, P.B. Griffin, Silicon VLSI Technology: Fundamentals, Practice, and Modeling, Prentice Hall
- • G.S. May, S.M. Sze, undamentals of Semiconductor Fabrication, Wiley
Supplementary Reading
- • S.A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press
- • S.K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide,, Wiley-Interscience