National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

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Syllabus

Course Details

Subject {L-T-P / C} : PH6575 : Semiconductor Device Process Simulation Laboratory { 0-0-3 / 2}

Subject Nature : Practical

Coordinator : Jyoti Prakash Kar

Syllabus

Module 1 :

Familiarization with simulation software

Module 2 :

Structure and bonding analysis of a semiconductor

Module 3 :

Theoretical calculation of bandgap of a semiconductor

Module 4 :

Estimation of density of states of a semiconductor

Module 5 :

Estimation of the characteristics of p-n junction with variation in semiconductor parameters

Module 6 :

Simulation of the output characteristics of metal oxide field effect transistor with variation in gate dielectric and channel properties

Module 7 :

Simulation of the performance of bipolar junction transistor with variation in junction characteristic

Module 8 :

Estimation of output characteristics of optoelectronic devices

Module 9 :

Simulation of the behavior of semiconductor sensors

Module 10 :

Simulation of the output characteristics of MEMS

Module 11 :

Design of masks for a given microelectronic device

Course Objective

1 .

To impart knowledge on design of semiconductor device structures

2 .

The softwares used for semiconductor process simulation

3 .

Estimation of output characteristics of semiconductor materials and devices

Course Outcome

1 .

At the end of course, students will be able to understand the effect of process parameters on device performance

2 .

Simulate the device for desired output

3 .

Design microelectronics devices with different dimensions

Essential Reading

1 .

Laboratory Manual, Laboratory Manual, Laboratory Manual , Laboratory Manual

2 .

Y. C. Wu, Y. R. Jhan, 3D TCAD Simulation for CMOS Nanoeletronic Devices, Springer verlag , (2018)

Supplementary Reading

1 .

G. Wachutka, G. Schrag, Simulation of Semiconductor Processes and Devices, Springer , (2004)

Journal and Conferences

1 .