Syllabus

(3 hours)
Introduction: Basics of compound semiconductors, Advantages of compound semiconductors, Historical background of compound semiconductors, Current trend of compound semiconductors

(6 hours)
Types and structural properties: Types (III-V, II-VI, IV-VI, IV-IV), Crystal structure, Lattice constant, Defects, Direct and indirect bandgap, Band-to-band and band-to-impurity transitions

(6 hours)
Electronic properties: Carrier concentration and mobility, Fermi level pinning, Barrier formation and current flow, Diffusive vs. ballistic flow, Carrier scattering mechanisms, Layered compound semiconductors, Heterojunction, Contrasts with p-n diodes.

(6 hours)
Compound semiconductors processing: Growth of compound semiconductor wafer, thin film and nanostructures, Compound semiconductors characterizations: Structural, compositional, optical and electrical characterization

4 hours)
Band engineering: Modification of band structure by alloying, Heterostructures and strain, Buffer layer, Surface passivation, Thermal treatments, Doping in compound semiconductors

(5 hours)
Advanced Structures and Processing: Self-assembly, Bonding, Multi-layer compound semiconductors, Compound semiconductor based composite and hybrid structures, Etching of compound semiconductors, Challenges in compound semiconductor processing

Compound semiconductors devices: Two-valley model of compound semiconductors, Optoelectronic devices, Sensors and detectors, High frequency and high mobility devices, High power devices

To impart knowledge on the fundamentals of compound semiconductors

Structural and electronic properties of compound semiconductors

Fabrication of compound semiconductor based materials and devices

Principle of operation of compound semiconductor devices

At the end of course, students will be able to familiarize with types of compound semiconductors and their properties

Synthesize and characterize compound semiconductors material

Develop compound semiconductors processing technique

Fabricate compound semiconductors based advanced devices

S. K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley , (2008)

C. Wang, Introduction to Semiconductor Technology: GaAs and Related Compounds, Wiley-Interscience , (1990)

S. Tiwari, Compound Semiconductor Device Physics, Academic Press , (1991)

O. Oda, Compound Semiconductor Bulk Materials and Characterization, World Scientific , (2007)

L. Brown, Compound Semiconductor Devices: Structures & Processing, Magnum Publishing , (2019)

Z. Liu, T. Huang, Q. Li, X. Lu, X. Zou, Compound Semiconductor Materials and Devices, Springer , (2026)