National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

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Syllabus

Course Details

Subject {L-T-P / C} : PH6502 : Integrated Circuit Technology { 3-0-0 / 3}

Subject Nature : Theory

Coordinator : Jyoti Prakash Kar

Syllabus

Module 1 :

(2 hours)
Introduction: Importance of integrated circuits, Moore’s law, Introduction to microelectronic fabrication, Technology trend of integrated circuits, Basics of layout design.

Module 2 :

(5 hours)
Oxidation: Cleanroom, Native oxide on wafers, Dry oxidation, Wet oxidation, Growth kinetics and models, Parameters affecting oxide growth rate, Oxide quality, Oxide thickness, Different methods of oxide growth

Module 3 :

(5 hours)
Diffusion: Basic diffusion process, Dopant solid solubility, Diffusion equation, Error function, Evaluation of diffused layers, Concentration dependent diffusivity, Diffusion profiles, Lateral diffusion

Module 4 :

(4 hours)
Ion implantation: Generation of ions, Range of implanted ions, Ion channeling, Ion damage, Ion stopping, Conventional annealing, Rapid thermal annealing (RTA), Shallow junction formation, High energy and high current implantation

Module 5 :

(5 hours)
Lithography: Basics of photolithography, Photolithography room, Exposure tools, Masks, Photoresists, Pattern transfer, Photo-exposure systems, Contact mode, Proximity mode, Projection mode, Light sources, g-line, i-line, Resolution enhancement, Photoresist baking and developing, Inspection of microstructure and defects, Critical dimension and registration error measurement, Laser writer technique, E-beam lithography, Extreme ultraviolet lithography, X-ray and ion lithography, Next generation lithography

Module 6 :

(6 hours)
Growth and Etching: Dielectric, Semiconducting and metallic layer formation, Growth of polysilicon, Formation of silicide, Epitaxial layer, Wet etching, Isotropic and anisotropic etching, Silicon etching, Dielectric etching, Metal etching, Plasma etching, Reactive ion etching (RIE), Lift-off techniques, Porous silicon fabrication

Module 7 :

(5 hours)
IC manufacturing: Electrical testing, Die separation, Encapsulation, SOI integration, System on a chip, CMOS process flow for MOSFET and BJT, Quality and Reliability of IC devices, Future trends and challenges

Course Objective

1 .

To impart knowledge on various steps of CMOS fabrication

2 .

Fabrication of mask for photolithography

3 .

Science and technology of various unit steps

4 .

CMOS compatible materials

Course Outcome

1 .

At the end of course, students will be able to understand the CMOS process flow of integrated circuit fabrication

2 .

Develop electronic materials and related process

3 .

Know the cleanroom and equipment for IC fabrication

4 .

Design and fabrication of microelectronic devices

Essential Reading

1 .

J. D. Plummer, M. D. Deal, P. B. Griffin, Silicon VLSI Technology: Fundamentals Practice and Modeling, Pearson , (2009)

2 .

G. S. May, S. M. Sze, Fundamentals of Semiconductor Fabrication, John Wiley & Sons Inc. , (2007)

3 .

G. Bose, IC Fabrication Technology, McGraw Hill Education , (2017)

Supplementary Reading

1 .

S. A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press , (2012)

2 .

S. K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley , (2008)

Journal and Conferences

1 .