Syllabus

(6 hours)
Fundamentals of semiconductor physics: Introduction and electronic states of semiconductors, Review of quantum mechanics, Introduction to solid state materials, Brillouin zone, Dynamics of electrons in periodic potential, Formation of energy band, The k-space diagram, Bandgap of semiconductors, Direct and indirect bandgap semiconductors, Drift current, Electron effective mass and concept of holes, Properties of conduction and valance bands

(6 hours)
Equilibrium properties of semiconductors: The Semiconductor in equilibrium, Statistical laws, The distribution functions and the Fermi energy, Density of states function and extension to semiconductor, Charge carriers in semiconductors, Intrinsic carrier concentration, Extrinsic semiconductors, Density of charge carriers in extrinsic semiconductors and their temperature dependence, Intrinsic and extrinsic semiconductor Fermi energy level, Degenerate and non-degenerate semiconductors, Bandgap engineering

(4 hours)
Carrier transport phenomena: Drift of electrons in an electric field, Mobility, Conductivity, Carrier diffusion, Diffusion current density, Total current density, Graded impurity distribution, Induced electric field, Einstein relation

(7 hours)
Non-equilibrium carrier dynamics: Non-equilibrium excess carriers in semiconductors, Carrier generation and recombination, Semiconductor in equilibrium, Excess carrier generation and recombination, Continuity equations, Time-dependent diffusion equations, Ambipolar transport, Limits of extrinsic doping and low injection, Applications of the ambipolar transport equation, Quasi-Fermi energy levels

(7 hours)
Fundamental semiconductor devices: Basic structure of p-n junction, p-n junction under forward & reverse bias, p-n junction current, Small signal model of the p-n junction, Generation-recombination current, Junction breakdown, Zener and avalanche breakdown

(6 hours)
Semiconductor junctions and devices: Metal-semiconductor junctions, Ohmic and rectifying contacts (Schottky diode), Heterojunctions, Diode model, BJT and MOSFET, Modes of operation, MOSFETs family characteristics, Threshold voltage and transconductance, first order and second order effects in MOSFETs, FinFET

To impart knowledge on the fundamental physics of charge carrier concentration, doping and charge carrier injection in semiconductor

Construction of the band diagram of the semiconductor junction

The working principles of semiconductor devices

At the end of course, students will be able to: Understand the concept of bandgap energy and the difference between metals, semiconductors, and insulators

Estimate the Fermi energy and carrier concentration of semiconductors

Explain the working principle of various semiconducting devices including p-n junctions, BJTs and MOSFETs

Design basic semiconductor device structure

D. A. Neamen, Semiconductor Physics and Devices, McGraw-Hill , (2002)

B. G. Streetman, S. K. Banerjee, Solid State Electronic Devices, Pearson , (2015)

P. Y. Yu, M. Cardona, Fundamentals of Semiconductors, Springer , (1996)

J. Singh, Semiconductor Optoelectronics, McGraw-hill , (1995)

K. F. Brennan, The Physics of Semiconductors, Cambridge Univ. Press , (1999)

S. M. Sze, Physics of Semiconductor Devices, John Willey , (1981)