Syllabus

(7 hrs) Introduction of semiconductors, Review of Quantum Mechanics: Schrodinger’s wave equation, Applications of Schrodinger’s wave equation: Electron in free space, The infinite and finite potential well, The step potential function, The potential barrier and tunneling, Extensions of the wave theory to atoms, Introduction to solid state materials, Space lattices and seven crystal systems, Crystal Planes and Miller Indices, Directions in Crystals, Basic Crystal Structures: Diamond structure, Zinc blende structure, Sodium chloride structure, Cesium chloride structure, Hexagonal close-packed structure, Wurtzite structure, Reciprocal lattice, Brillouin zone.

(7 hrs) Allowed and Forbidden Energy Bands, Formation of Energy Bands, The Kronig–Penney Model, The k-space diagram, Bandgaps of semiconductors, Electron effective mass and concept of holes, Properties of conduction and valance bands. The Semiconductor in equilibrium, Statistical laws, The distribution functions and the Fermi energy, Density of states function and extension to semiconductor,

(6 hrs) Densities of charge carriers in extrinsic semiconductors and their temperature dependence, Intrinsic and extrinsic semiconductor Fermi energy level, Degenerate and non-degenerate semiconductors, Bandgap engineering

(8 hrs) Carrier transport phenomena: Carrier Drift, Mobility, Conductivity, Carrier diffusion, Diffusion current density, Total current density, Graded impurity distribution, Einstein relation, Non-equilibrium excess carriers in semiconductors: Carrier generation and recombination, Semiconductor in equilibrium, Excess carrier generation and recombination, Characteristics of excess carriers, Limits of extrinsic doping and low injection, Applications of the ambipolar transport equation, Quasi-Fermi energy levels

(8 hrs) Fundamental semiconductor devices: Basic structure of p-n junction, Zero applied bias, Reverse applied bias, Junction breakdown, The p-n junction diode, p-n junction current, Generation–recombination currents and high-injection levels, Small signal model of the p-n junction

To impart knowledge on
The physics of the band theory of solid and a proper understanding of semiconductors under equilibrium

The concepts of electrons and holes to their effective masses and their density of state in semiconductors.

Fundamental physics of charge carrier concentration, doping and charge carrier injection in semiconductor carrier dynamics and the resulting conduction properties of semiconductors

The importance of different scattering mechanisms that limit mobility

The working principles of the formation of p-n junctions and carrier transport phenomena

At the end of course, students will be able to:
CO1: Understand the concept of the band theory of solid and the difference between metals, semiconductors and insulators.

CO2: Estimate the Fermi energy and carrier concentration of semiconductors

CO3: Understand the importance of doping to change carrier density

CO4: Understand carrier dynamics and the resulting conduction properties of semiconductors

CO5: Explain the working principle of p-n junctions.

D. A. Neamen, Semiconductor Physics and Devices, Tata McGraw-Hill (2002)

P. Y. Yu, M. Cardona, Fundamentals of Semiconductors, Spriger (1996)

K. F. Brennan, The Physics of Semiconductors, Cambridge Univ. Press (1999)

S. M. Sze, Physics of Semiconductor Devices, John Willey (1981)