Syllabus

Module 1 (6 Hours)
MOSFETs:
Physical Description and theory of MOSFET, MOSFET Models and amplifier, DC biasing of MOSFETs, Design of MOSFET amplifiers, MOSFET Current Sources, Depletion MOS Differential Amplifiers, BiCMOS Differential Amplifiers, Frequency Response of Differential Amplifiers.

Module 2 (4 Hours)
Feedback Amplifiers:
Analysis of Feedback Amplifiers, Series-Shunt Feedback, Series–Series Feedback, Shunt-Shunt Feedback, Shunt-Series Feedback, Feedback Circuit Design, Stability Analysis, Compensation Techniques

Module 3 (6 Hours)
Active Filters:
Types of active filters, First-order filters, Butterworth Filters, Filter Design Guidelines
Op-Amps: Internal structure, parameters, and characteristics of practical Op-Amps, CMOS Op-Amps, BJT Op-Amps, BiCMOS Op-Amps, Design of Op-Amps.

Module 4 (8 Hours)
Integrated Analog Circuits and Applications:
Circuits with Op-Amps and diodes, comparators, zero-crossing detectors, Schmitt triggers, function generators, Voltage controlled Oscillators, 555 timer, phase-lock loops, Sample-and-hold circuits, DACs and ADCs, Circuit design using analog integrated circuits.


Module 5 (10 Hours)
Integrated Digital circuits and applications (CMOS-based):
Performance parameters of logic gates, NMOS Inverters and Logic circuits, CMOS Inverters and Logic circuits, BJT Inverters, Transistor-Transistor logic gates, Emitter-Coupled logic gates, Bi-CMOS Inverters, Interfacing and Comparison of Logic gates, Design of logic circuits, Nano-scale semiconductor devices, SPICE for above

The goal of this course is to provide a good understanding on the design and
implementation of analog circuits for various applications such as amplification,
filtering, frequency generation etc.

Understanding the CMOS circuit and design of Digital VLSI

To provide knowledge about a Shunt-Series feedback amplifier, determine the open-loop gain (Ai), the feedback current transfer function(Bi), and the closed-loop current transfer function (Aif)

Confront integrated device and/or circuit design problems, identify the design issues, and develop solutions.

1. Student will be able to explain the underlying physics and principles of operation of p-n junction diodes, metal-oxide-semiconductor (MOS) capacitors, bipolar junction transistors (BJTs), and MOS field effect transistors (MOSFETs), and describe and apply simple large signal circuit models for these devices which include charge storage elements
2. Will be able to explain how devices and integrated circuits are fabricated and describe and discuss modern trends in the microelectronics industry
3. Will be able to determine the frequency range of simple electronic circuits and understand the high-frequency limitations of BJTs and MOSFETs
4. Can calculate the transfer characteristics of a CMOS inverter and explain how device dimensions and parameters impact them and inverter switching speed
5. Will understand the limitations of the various device models, identify the appropriate model for a given problem or situation, justify the selection, and design simple devices and circuits to meet stated operating specifications.

Muhammad H. Rashid, Microelectronic Circuits Analysis and Design, Cengage Learning , 2nd Ed., 2012

D. Neamen, Microelectronics Circuit Analysis and Design, Mc GrawHill , 5th Ed., 2016

Sedra and Smith, Microelectronics, Oxford Press , 7th Ed., 2017

Richard Jaeger, Travis Blalock, Microelectronic Circuit Design, McGraw-Hill Education , 4 th. edition, 2010