National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

An Institute of National Importance
NIT Rourkela Inside Page Banner

Syllabus

Course Details

Subject {L-T-P / C} : EC6211 : VLSI Fabrication Technology { 3-0-0 / 3}

Subject Nature : Theory

Coordinator : Sougata Kumar Kar

Syllabus

Module 1 :

Introduction to IC Technology: Basic fabrication steps and their Importance. Environment of IC Technology: Concepts of Clean room and safety requirements, Concepts of Wafer cleaning processes and wet chemical etching techniques. Impurity Incorporation: Solid State diffusion modeling and technology Ion Implantation modeling, technology and damage annealing, characterization of Impurity profiles, Oxidation: Kinetics of Silicon dioxide growth both for thick, thin and ultra thin films, Oxidation technologies in VLSI and ULSI, Characterization of oxide films, High k and low k dielectrics for ULSI. Lithography: Photolithography, E-beam lithography and newer lithography techniques for VLSI/ULSI, Mask generation. Chemical Vapour Deposition Techniques: CVD techniques for deposition of polysilicon, silicon dioxide, silicon nitride and metal films Epitaxial growth of silicon: modeling and technology. Metal Film Deposition: Evaporation and sputtering techniques, Failure mechanisms in metal interconnects Multi-level metallization schemes. Plasma and Rapid Thermal Processing: PECVD, Plasma etching and RIE techniques RTP techniques for annealing, growth and deposition of various films for use in ULSI. BJT fabrication steps, MOSFETs fabrication: metal gate and poly gate technology, Isolation techniques, tailoring in device parameters, CMOS process, BICMOS process.

Course Objective

1 .

Explain the process flow for different microelectronic processes.

2 .

Describe the processing steps (including the chemical and physical basis,) manufacturing techniques, measurement techniques, and important output parameters.

3 .

Relate device characteristics to key process parameters.

Course Outcome

1 .

Development of VLSI Fabrication methodology for CMOS devices. Students can also develop fabrication steps for novel semiconductor devices like SOI MOSFETs, DG MOSFETs, FinFETs etc.

Essential Reading

1 .

S. M. Sze, VLSI Technology, McGraw Hill Education , 2nd Edition, 2017

2 .

S.K.Gandhi, VLSI Fabrication Principles, Wiley , 2nd Edition, 2008

Supplementary Reading

1 .

S. Franssila, Introduction to Microfabrication, Wiley-Blackwell , 2nd Edition, 2010

2 .

Stephen A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press , 2nd Edition, 2012

Journal and Conferences

1 .

EEE Transactions on Semiconductor Manufacturing

2 .

IEEE Transactions on Electron Devices