Course Details

Subject {L-T-P / C} : ME4254 : Semiconductor Manufacturing { 3-0-0 / 3}

Subject Nature : Theory

Coordinator : Susanta Kumar Sahoo

Syllabus

Module I [7 h]: Introduction: Historical Evolution, Present trend, importance, classification, IC manufacturing steps, Microchip, Fundamentals of micro and nano fabrication technologies.
Semiconductor Basics and Device: Semiconductor Materials, Transport and recombination theory, pn and Schottky barrier diodes, bipolar and junction field-effect transistors, and MOS capacitors, ICs and transistors.
Semiconductor Manufacturing Environment: Contamination, its control, Clean rooms, design, Silicon Wafers, preparation, safety requirements, cleaning process, wet chemical etching techniques.
Module II [7 h]: Silicon growth: Silicon crystal structure, Defects, single crystal growth, EGS from MGs, theory, methods, preparation, required properties
Epitaxial growth: Principle, model, methods of deposition, doping and anti-doping, Substrate Engineering, MBE, Defects, Application
Oxidation: Kinetics of Silicon dioxide growth both for thick, thin and ultra-thin films, Oxidation technologies, Thermal Processes, RTP, Characterization of oxide films, Defects.
Thin Film Deposition: Synthesis and properties of various types of inorganic membranes and thin films, sol-gel process, synthesis of porous materials and thin films, Chemical and physical Vapor Deposition and Dielectric Thin Films, Metal Film Deposition: Evaporation and sputtering techniques, Failure mechanisms in metal interconnects, Atomic Layer Deposition (ALD), Deposition of Dielectrics and Semiconductor Layers.
Module III [7 h]: Diffusion: Laws, Diffusivities, systems, Impurity Incorporation, modeling.
Lithography: Photolithography, steps, optical lithography, E-beam lithography and advanced newer lithography techniques and back-end processing, Mask generation, Vapor Prime to Soft Bake, Alignment and Exposure, Photoresist Development.
Etching: classification, type, parameters, Ion beam milling, Doping, Chemical Mechanical Polishing
Module IV [7 h]: Ion Implantation: Plasma Basics, Theory, Implanters, annealing, channeling, applications.
Metalization: Single level, Multi-level metallization schemes, wiring the Chip, methods, CMP, CMOS metallization steps, problems
Module V [8 h]: Process Integration: Silicon processing, methods, Passive components, Bipolar Technology, MOSFET Technology, MESFET Technology, fabrication of p-n junction, BJT, CMOS, BiCMOS,
Introduction to MEMs: Types, characteristics, microprocessing, methods, packaging.
Assembling and Packaging: materials, types, die attachment techniques, packaging fabrication techniques, sealing, encapsulation, assembly process, techniques, reliability problems in packaging.

Course Objectives

Course Outcomes

CO1. Get the theoretical basis for processing of semiconductor devices and integrated circuits.
CO2. Able to do photolithography and simple processing of semiconductors in clean room, and to do characterization with selected techniques.
CO3. Able to present and discuss the theoretical basis for processing and characterization.
CO4. Able to process integrate the all complex activities of semiconductor manufacturing.
CO5. Able to know the advanced technologies on testing and measurements of thin film.

Essential Reading

Supplementary Reading