Unit/Module 1 Crystal Growth (3hr)
Si Crystal growth from melt, FZ and Cz process, GaAs crystal growth technique

Unit 2 Silicon Oxidation (3hr)
Thermal oxidation, impurity redistribution, oxide quality and thickness

Unit 3 Photolithography (2hr)
Optical lithography, advanced lithography methods

Unit 4 Etching (2hr)
Wet chemical etching, dry etching

unit 5 Diffusion (3hr)
basic diffusion process and equation, extrinsic diffusion, lateral diffusion

unit 6 Ion implantation (2hr)
Range of implanted ions, implant damage and annealing

unit 7 Film deposition (10hr)
Epitaxial growth techniques (CVD, Molecular beam) and defects, Dielectric deposition (SiO2, SiN), Polysilicon deposition, metallization

Familiarization with the trends and challenges of semiconductor device fabrication

Introduction to basic Semiconductor fabrication process

CO1: To know the fundamentals of various IC fabrication processes
CO2: To know the process flow for fabrication of semiconductor devices
CO3: Estimation of process parameters (Growth, yield, rate)
CO4: To understand the instrumentation and components of the fabrication unit
CO5: Familiarisation with the upcoming semiconductor technology

• J.D. Plummer, M.D. Deal, P.B. Griffin, Silicon VLSI Technology: Fundamentals, Practice, and Modeling, Prentice Hall

• G.S. May, S.M. Sze, undamentals of Semiconductor Fabrication, Wiley

• S.A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press

• S.K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide,, Wiley-Interscience